姓名：何红宇
职称：副教授
研究方向：半导体器件物理，集成电路设计
Email: hongyuhe2018@qq.com
受教育经历：
华中科技大学电子科学与技术专业本科毕业；华中科技大学微电子学与固体电子学专业硕士毕业；华南理工大学微电子学与固体电子学专业博士毕业；北京大学电子科学与技术博士后。
期刊论文：
[J1] Hongyu He, Xinnan Lin, Shengdong Zhang. Current model for organic diodes at different temperatures: Comparison with universal curve equation[J]. IEEE Transactions on Electron Devices, 2024, doi: 10.1109/TED.2024.3350552.
[J2] Hongyu He, Junli Yin, Xinnan Lin, Shengdong Zhang. Surface-potential-based drain current model for ambipolar organic TFTs[J]. IEEE Trans. Electron Devices, 2024, 71(1): 11-17.
[J3] Hongyu He, Xinnan Lin, Shengdong Zhang. Comparative study of the exponential-trap-based and the mobility-based space-charge-limited current models for organic diode modeling[J]. Solid-State Electronics, 2023, 204: 108653.
[J4] Hongyu He, Yuan Liu, Yuyu Tan, Xinlin Wang, Xinnan Lin, Shengdong Zhang. Surface-potential-based drain current model for two-dimensional organic TFTs using the multiple trapping and release conduction theory, Solid-State Electronics, 2022, 187: 108206.
[J5] Hongyu He, Yuan Liu, Junli Yin, Xinlin Wang, Xinnan Lin, Shengdong Zhang. Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs, Solid-State Electronics, 2021, 181–182:108011.
[J6] Hongyu He, Chao Xiong, Junli Yin, Xinlin Wang, Xinnan Lin, Shengdong Zhang. Modeling of both Arrhenius and non-Arrhenius temperature-dependent drain current for organic thin-film transistors, IEEE Trans. Electron Devices, 2020, 67(11): 5091-5096.
[J7] Hongyu He, Chao Xiong, Junli Yin, Xinlin Wang, Xinnan Lin, Shengdong Zhang. Analytical drain current and capacitance model for amorphous InGaZnO TFTs considering temperature characteristics, IEEE Trans. Electron Devices, 2020, 67(9): 3637-3644.
[J8] Hongyu He, Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng, Shengdong Zhang. Analytical drain current model for amorphous InGaZnO thin-film transistors at different temperatures considering both deep and tail trap states, IEEE Trans. Electron Devices, 2017, 64(9): 3654-3660.
[J9] Hongyu He, Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng, Shengdong Zhang. Analytical drain current model for organic thin-film transistors at different temperatures considering both deep and tail trap states, IEEE Trans. Electron Devices, 2016, 63(11): 4423-4431.
[J10] Hongyu He, Xueren Zheng, Shengdong Zhang. Above-threshold 1/f noise expression for amorphous InGaZnO thin-film transistors considering series resistance noise, IEEE Electron Device Letters, 2015, 36(10): 1056-1059.
[J11] Hongyu He, Xueren Zheng, Shengdong Zhang. 1/f noise expressions for amorphous InGaZnO TFTs considering mobility power-law parameter in above-threshold regime, IEEE Electron Device Letters, 2015, 36(2): 156-158.
[J12] Hongyu He, Jin He, Wanling Deng, Hao Wang, Yuan Liu, Xueren Zheng. Trapped-charge-effect-based above-threshold current expressions for amorphous silicon TFTs consistent with Pao-Sah model. IEEE Trans. Electron Devices, 2014, 61(11): 3744-3750.
[J13] Hongyu He, Xueren Zheng, Jin He, Mansun Chan. Polynomial-effective-channel-mobility-based above-threshold current model for undoped polycrystalline-silicon thin-film transistors consistent with Pao-Sah model, IEEE Trans. Electron Devices, 2012, 59(11): 3130-3132.
[J14] Hongyu He, Xueren Zheng. Analytical expressions for doped polycrystalline silicon thin-film transistors in above-threshold regime consistent with Pao-Sah model considering trapped charge effect, IEEE Trans. Electron Devices, 2011, 58(12): 4324-4332.
[J15] Hongyu He, Xueren Zheng. Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime, Journal of Semiconductors, 2011, 32(7): 074004.
[J16] Hongyu He, Xueren Zheng. Analytical model of undoped polycrystalline silicon thin-film transistors consistent with Pao-Sah model, IEEE Trans. Electron Devices, 2011, 58(4): 1102-1107.
指导研究生发表的期刊论文
[X1] Yongtao Zeng, Hongzhen Chu, Ning Wei, Yuehua Li, Xinlin Wang, Hongyu He. A 5T1C pixel circuit compensating mobility and threshold voltage variation, Microelectronics Journal, 2021, 117: 105283.
[X2] Hongzhen Chu, Ning Wei, Bo Yu, Huicheng Zhao, Yuehua Li, Xinlin Wang, Hongyu He. A mirrored 5T1C OLED pixel circuit for compensating characteristics variations and voltage drop, Microelectronics Journal, 2023, 131:105645.
[X3] Huicheng Zhao, Bo Yu, Ning Wei, Hongzhen Chu, Yuehua Li, Xinlin Wang, Hongyu He. A 6T1C pixel circuit compensating for TFT electrical characteristics variations, voltage drop, and OLED degradation[J]. Microelectronics Journal, 2024, 144: 106093.
寄语研究生：
科研是一件快乐的事情，一份付出一份收获。
